Photomask Pattern
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✓ Auto-detected from DXF $INSUNITS header
⚠ $INSUNITS not found — please confirm unit above
Etchant
⚠ HNA is isotropic. Temperature range limited to 15–30°C (published data). All crystal directions etch at equal rates.
Etch Rates (µm/min) — Editable
TMAH
KOH
HNA
Etch Time
Simulation
Wafer / DXF Info
Surface: (100)
Flat zone: (110) direction (X-axis)
Substrate: layer "0" rectangle
Mask pattern: layer "mask" polylines
Mask thickness: 1 µm (ideal, no etch)
Grid resolution: 2 µm/cell
Flat zone: (110) direction (X-axis)
Substrate: layer "0" rectangle
Mask pattern: layer "mask" polylines
Mask thickness: 1 µm (ideal, no etch)
Grid resolution: 2 µm/cell
Ready
Grid: — µm/div
Max Etch Depth: 0 µm
Computing...
Initializing simulation